Fabrication, Properties and Applications of Low-Dimensional Semiconductors / Edition 1

by M. Balkanski, Ivan Yanchev

Overview

A recent major development in high technology, and one which bears considerable industrial potential, is the advent of low-dimensional semiconductor quantum structures. The research and development activity in this field is moving fast and it is thus important to afford scientists and engineers the opportunity to get updated by the best experts in the field. The present book draws together the latest developments in the fabrication technology of quantum structures, as well as a competent and extensive review of their fundamental properties and some remarkable applications. The book is based on a set of lectures that introduce different aspects of the basic knowledge available, it has a tutorial content and could be used as a textbook. Each aspect is reviewed, from elementary concepts up to the latest developments.
Audience: Undergraduates and graduates in electrical engineering and physics schools. Also for active scientists and engineers, updating their knowledge and understanding of the frontiers of the technology.

Product Details

ISBN-13:	9780792335696
Publisher:	Springer Netherlands
Publication date:	07/31/1995
Series:	NATO Science Partnership Subseries: 3 , #3
Edition description:	1995
Pages:	457
Product dimensions:	6.69(w) x 9.61(h) x 0.04(d)

Table of Contents

Molecular Beam Epitaxy — Fundamental Growth Aspects and Selected Contributions to Physics and Applications of Low-Dimensional Semiconductor Structures.- Preparation of Quantum Structures: Quantum Well Infrared Detectors.- Heteroepitaxy of Layered III-VI Semiconductor GaSe On Si(111) 7x7 Surface.- Fabrication and Simulation of 0.1—m Pseudomorphic HEMTs. The Role of Partially Depleted p-Buffer.- Crystal Structure Investigation of PbO Thin Films Produced by Pulsed Laser Evaporation.- Modeling, Simulation and Characterization of the Metal-semiconductor Micro/Nanostructures.- Electronic States in Quantum Wells and Superlattices.- A New Method to Compute Subband Energy States of Low-Dimensional Systems by Using Feynman Path Integrals.- Bound-to-Continuum State Absorption Line Shape in Quantum Well Structures.- A Tight Binding Calculation of Transition Energies in Triangular Symmetrical Quantum Wells.- Separation of Variables in the One-Electron Schrödinger Equation for Quasi-One Dimensional Electron systems.- Transfer Matrix Based Calculations of Energy Levels in Strained In-GaAs/GaAs Multiple Quantum Wells.- Electrons and Holes in Quantum Structures.- Anomalous Evolution of Photoluminescence of Porous Silicon Layers at UV Irradiation.- Hot Hole p-Ge Lasers and Masers for Spectroscopy of Multiquantum-Well HeterostructuresGe/Gei-xSix.- New Experimental Approach to the Excess Carrier Transfer in Semiconductor Structures Based on Time Resolved Photovoltage.- Some Optical Properties of Semiconductor Quantum Well Heterostructurcs.- Size-Dependent Carrier Recombination in CdS Nanocrystals in Single-Electron and Plasma Regimes.- Quantum Hall Effect. Empirical Trends and Relations.- Persistent Currents in Mesoscopic Rings. Interference Effects in Disordered Multichain Rings inMagnetic Field.- Grating Assisted Electromagnetic Emission from Magnetoplasmon and Cyclotron Modes in Two-Dimensional Plasma Layer on GaAs. A Rigorous Theory.- Lattice Dynamics of HgBa2CuO3.- Advanced Optical Waveguide Structures.- Electrooptic Effect in Proton Exchanged LiNbO3 Waveguides.- Higher-Order Wave and Charge Confinement Effects in Semiconductor Double-Doped Optical Fibers: Quasi-Soliton Propagation and Bistability.- Waves in Gyrotropic Media.- Nonlinear Optical Devices.- Nonlinear Integrated Optics and All-Optical Waveguide Switching in Semiconductors.- Complete Switching With an Improvement in the Switching Intensity in AlGaAs Nonlinear Directional Couplers Using the Higher Order Orthogonal Modes.- A New Technique of Quantum Well Disordering and its Application to Integrated All-Optical Switches.

Editorial Reviews

The proceedings of the September 1994 NATO ASI, held in Sozopol, Bulgaria, are arranged in three parts, devoted to fabrication, fundamental properties, and applications of low-dimensional semiconductor structures. Among the topics are molecular beam epitaxy--fundamental growth aspects and selected contributions to physics and applications of low-dimensional semiconductor structures; electronic states in quantum wells and superlattices; and advanced optical waveguide structures. Annotation c. Book News, Inc., Portland, OR (booknews.com)

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