FRONTIERS IN ELECTRONICS-WOFE 09
Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.
"1136610087"
FRONTIERS IN ELECTRONICS-WOFE 09
Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.
33.49 In Stock
FRONTIERS IN ELECTRONICS-WOFE 09

FRONTIERS IN ELECTRONICS-WOFE 09

FRONTIERS IN ELECTRONICS-WOFE 09

FRONTIERS IN ELECTRONICS-WOFE 09

eBook

$33.49  $44.00 Save 24% Current price is $33.49, Original price is $44. You Save 24%.

Available on Compatible NOOK devices, the free NOOK App and in My Digital Library.
WANT A NOOK?  Explore Now

Related collections and offers


Overview

Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.

Product Details

ISBN-13: 9789814522052
Publisher: World Scientific Publishing Company, Incorporated
Publication date: 05/21/2013
Series: SEL TOP IN ELEC & SYS , #52
Sold by: Barnes & Noble
Format: eBook
Pages: 240
File size: 14 MB
Note: This product may take a few minutes to download.

Table of Contents

Preface v

Chapter 1 Ultimate CMOS, Novel MOSFETS, and Alternative Transistors

Challenges and Progress in III-V MOSFETs for CMOS Circuits S. Oktyabrsky M.Yakimov V. Tokranov R. Kambhampati H. Bakhru S. Koveshnikov W. Tsai F. Zhu J. Lee 3

Short Channel, Floating Body, and 3D Coupling Effects in Triple-Gate Mosfet K.-l. Na J.-H. Lee S. Cristoloveanu Y.-H. Bae P. Patruno W. Xiong 15

Analog and Digital Performance of the Screen-Grid Field Effect Transistor (SGrFET) K. Fobelets P. W.Ding Y.Shadrokh J. E. Velazquez-Perez 25

Analytical Characterization and Modeling of Shielded Test Structures for RF-CMOS B. Torres-Rios R. Torres-Torres R. Murphy-Arteaga E.A.Gutierrez-D 35

Germanium on Sapphire H. S. Gamble P. T. Baine H. Wadsworth Y. H. Low P. V. Rainey F. H. Ruddell B. M. Armstrong D. W. McNeill S. J. N. Mitchell 47

Single Event Effects in the Nano Era M. L. Alles L. W. Massengill R. D. Schrimpf R. A. Weller K. F. Galloway 57

An Efficient Numerical Method of DC Modeling for Power Mosfet, Mesfet and AlGaN/GaN Hemt T. Rahman M. A. Hugue S. K. Islam 67

Nanocomponents: A Designer's Point of View H. Fanet 83

Chapter 2 Nano Materials, Structures and Devices

Silicon Spintronics I.Appelbaum 95

Nano Characterization of Materials D.K. Schroder 103

Biomolecular Sensing Using Carbon Nanotubes: A Simulation Study G. B. Abadir K. Walus R. F. B. Turner D. L. Pulfrey 121

Large Area Nanoscale Patterning by Interferometric Lithography-Nanophotonics and Nanofluidics S. R. J. Brueck 131

The Deposition and Control of Self Assembled Silicon Nano Islands on Crystalline Silicon R. Kiebach Z. Yu M. Aceves-Mijares D. Bian J. Du 143

Chapter 3 Ultra High Speed Devices andConcepts

AIGaN/GaN HEMTs: Recent Developments and Future Directions S.Rajan U. K. Mishra T. Palacios 155

Fluctuations and Ultrafast Processes in Voltage-Biased Two-Dimensional Channels A. Matulionis 165

Non-Ideal Current Transport in Heterostructure Field Effect Transistors A. Koudymov M. Shur 177

THz Detection by Field-Effect Transistors in Magnetic Fields: Shallow Water vs Deep Water Mechanism of Electron Plasma Instability M. Sakowicz J. Lusakowski K. Karpierz M. Grynberg W. Knap K. Köhler G. Valusis K. Golaszewska E. Kaminska A. Piotrowska 191

Cyclotron Resonance Vanishing Effect and THz Detection A. Chebotarev G. Chebotareva 201

Chapter 4 Optoelectronics and Advanced Lasers, Detectors and Imagers

Impregnated Semiconductor Scintillator S. Luryi 215

Terahertz Quantum Cascade Lasers and Real-Time T-Rays Imaging at Video Rate Q. Hu 225

Proposal of Novel Structure Light Emitting Devices Consisting of InN/GaN MQWs with Ultrathin InN Wells in GaN Matrix A. Yoshikawa S.-B. Che 235

Recent Developments in Broadband Terahertz Spectroscopy N. Karpowicz J. Dai X.-C. Zhang L. Zhang C. Zhang 247

Hot-Electron Transport in Quantum-Dot Photodetectors L. H. Chien A. Sergeev N. Vagidov V. Mitin 255

Scalable Single Photon Detector for Terahertz and Infrared Applications D. H. Wu B. R. Matis K. Bussman 265

Optical MEMS Technologies for Electrically Tunable Multi-Spectral Short-Wave Infrared Sensors and Arrays J. S. Milne J. M. Dell A. J. Keating L. Faraone 277

Microbolometers Fabricated with Surface Micromachining with a-Si-Ge: H Thermo-Sensing Films M. Moreno A. Kosarev A. Torres R. Ambrosio 287

Nanocrystalline Silicon Thin Film Transistors for High Performance Large Area Electronics M. R. Esmaeili-Rad H. J. Lee A. Sazonov A. Nathan 297

From the B&N Reads Blog

Customer Reviews