Hydrogenated Amorphous Silicon

by R. A. Street

Overview

Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. The first section is concerned with the atomic and electronic structure, and covers growth defects and doping and defect reactions. The emphasis is on the optical and electronic properties that result from the disordered structure. The second part of the book describes electronic conduction, recombination, interfaces, and multilayers. The special attribute of a-Si:H which makes it useful is the ability to deposit the material inexpensively over large areas, while retaining good semiconducting properties, and the final chapter discusses various applications and devices.

Product Details

ISBN-13:	9780521371568
Publisher:	Cambridge University Press
Publication date:	08/30/1991
Series:	Cambridge Solid State Science Series
Pages:	432
Product dimensions:	5.67(w) x 8.86(h) x 1.26(d)

Table of Contents

1. Introduction; 2. Growth and structure of amorphous silicon; 3. The electronic density of states; 4. Defects and their electronic states; 5. Substitutional doping; 6. Defect reactions, thermal equilibrium and metastability; 7. Electronic transport; 8. Recombination of excess carriers; 9. Contacts, interfaces and multilayers; 10. Amorphous silicon device technology.

Editorial Reviews

"...highly recommended to people entering the field professionally and to those who need an overview of the research so far." Andrew Holmes-Siedle, Nature

From the Publisher