Microwave Field-Effect Transistors: Theory, design and applications / Edition 3

by Raymond S. Pengelly

Overview

This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations. Perhaps the most comprehensive text on GaAs FET technology and its practical application. It covers the use of MESFET devices in microwave circuits, such as low-noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. This text is a classic reference for all engineers involved in the development of solid state microwave devices.

Product Details

ISBN-13:	9781884932502
Publisher:	The Institution of Engineering and Technology
Publication date:	06/30/1994
Series:	Electromagnetic Waves
Edition description:	3rd ed
Pages:	704
Product dimensions:	6.00(w) x 9.00(h) x (d)

Table of Contents

• Chapter 1: Introduction
• Chapter 2: GaAs FET Theory-Small Signal
• Chapter 3: GaAs FET Theory-Power
• Chapter 4: Requirements and Fabrication of GaAs FETs
• Chapter 5: The Design of Transistor Amplifiers
• Chapter 6: FET Mixers
• Chapter 7: GaAs FET Oscillators
• Chapter 8: FET and IC Packaging
• Chapter 9: Novel FET Circuits
• Chapter 10: Gallium Arsenide Integrated Circuits
• Chapter 11: Other III-V Materials and Devices