MOSFET Theory and Design

by R. M. Warner, B. L. Grung

Overview

Developed for a one-semester course at the junior, senior, or graduate level, MOSFET Theory and Design presents a clear, in-depth treatment of physical analysis and design principles for the MOSFET. By focusing solely on the MOSFET, this slim volume recognizes the dominance of this device in today's microelectronics technology while also providing students with an efficient text free of extra subject matter.
Carefully building from simple examples to more complex, real-life cases, the text begins with elementary theory for the MOS capacitor, adding and explaining the complicating factors step by step. It treats the interplay of MOS capacitor and PN junction in the MOSFET both physically and analytically, using some original tools. The book goes on to cover advanced models of the MOSFET, including SPICE treatments of small-signal and large-signal problems using Level 1, 2, and 3 first-generation models, and ending with a brief discussion of second- and third-generation models.
MOSFET Theory and Design offers a "hands on" approach to learning, employing analytic, computer, and design problems. It incorporates additional pedagogical aids such as a book summary, review questions that emphasize essential points, in-text exercises with accompanying solutions, and a comprehensive bibliography.

Product Details

ISBN-13:	9780195116427
Publisher:	Oxford University Press
Publication date:	01/28/1999
Edition description:	New Edition
Pages:	272
Product dimensions:	9.10(w) x 6.00(h) x 0.60(d)

About the Author

University of Minnesota

Table of Contents

PrefaceChartsPhysical ConstantsProperties of Silicon1. Basic MOSFET Theory1.1. Field-Effect Transistors1.2. MOSFET Definitions1.3. Rudimentary Analysis1.4. Current-Voltage Equations1.5. Universal Transfer Characteristics1.6. Transconductance1.7. Inverter Options2. MOS-Capacitor Phenomena2.1. Oxide-Silicon Boundary Conditions2.2. Approximate Field and Potential Profiles2.3. Accurate Band Diagram2.4. Barrier-Height Difference2.5. Interfacial Charge2.6. Oxide Charge2.7. Calculating Threshold Voltage3. MOS-Capacitor Modeling3.1. Exact-Analytic Surface Modeling3.2. Comparing MOS and Junction Capacitances3.3. Small-Signal Equivalent Circuits3.4. Ideal Voltage-Dependent Capacitance3.5. Real Voltage-Dependent Capacitance3.6. Physics of MOS-Capacitance Crossover3.7. Analysis of MOS-Capacitance Crossover4. Improved MOSFET Theory4.1. Channel-Junction Interactions4.2. Ionic-Charge Model4.3. Body Effect4.4. Advanced Long-Channel Models5. SPICE Models5.1. Level-2 Parameters5.2. Level-2 Model5.3. Small-Signal Applications of Model5.4. Large-Signal Applications of Model5.5. Recent MOSFET Models6. MOSFET-BJT Performance Comparisons6.1. Simple-Theory Transconductance Comparison6.2. Subthreshold Transconductance Theory6.3. Calculating Maximum MOSFET gm/Iout6.4. Transconductance versus Input Voltage6.5. Physics of Subthreshold TransconductanceSummaryAppendixes A-GTablesReferencesProblemsSymbol IndexSubject Index