This unique edited compendium consists of peer-reviewed articles focusing on 2D materials-based nanoelectronics to nanophotonic devices for biosensors and bio-nano-systems.
Wide-ranging topics span from novel systems for implementing data with security tokens, single chemical sensor for multi-analyte mixture detection, additively manufactured RF devices for communication, packaging, remote sensing, to energy harvesting applications.
Quantum dot-based devices featuring optical modulators and mid-infrared photodetectors in the form of Ferroelectric and quantum dot non-volatile memories, 3D-confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications are also included.
Contributed by eminent researchers, recent coverage of materials science for high-speed electronics, nanoelectronics based on ferroelectric and van der Waals materials, material synthesis, modeling of dislocations behavior in various heterostructures, Ultrahigh-Q on-chip SiGe microresonators for quantum transduction in new trend in computing are also prominently discussed.
Contents:
- Preface
- Two-Photon Absorption Effect on Pseudorandom Bit Sequence for High-Speed Operation (S Thapa, S Fan and N K Dutta)
- Mode-Locked Fiber Ring Laser Using Graphene Nanoparticles as Saturable Absorbers (S Thapa, A Rahman and N K Dutta)
- Reverse Engineering Protection Using Obfuscation Through Electromagnetic Interference (W Stark, S Chen and L Wang)
- Medical Diagnosis Using Volatile Organic Compounds Sensors (J-Y Sun, U Salahuddin, C Zhu and P-X Gao)
- Critical Layer Thickness for Epitaxial FAPbBrxI3-x on KCl (001) (E Parent, J Raphael, T Kujofsa and J E Ayers)
- Lattice Relaxation of Epitaxial FAPbI3 on MAPbClxBr3-x (001) (E Parent, J Raphael, T Kujofsa and J E Ayers)
- Quantum Dot Gate (QDG) FETs to Fabricate n-MOS Inverters Exhibiting 3-State Logic (R Mays, B Khan, R Gudlavalleti, A Almalki, A Salas, J Maramo, E Perez, Z Adamson, K Liu, M Owczarczyk, A Abdelgulil and F Jain)
- Propagation Delay Evaluation for Spatial Wavefunction Switched (SWS) FET-Based Inverter (A Almalki, B Saman, J Chandy, E Heller and F C Jain)
- Power Dissipation and Cell Area: Quaternary Logic CMOS Inverter vs Four-State SWS-FET Inverter (A Husawi, B Saman, A Almalki, R Gudlavalleti and F C Jain)
- Fabrication and Characterization of nMOS Inverters Utilizing Quantum Dot Gate Field Effect Transistor (QDGFET) for SRAM Device (B Khan, R Mays, R Gudlavalleti and F Jain)
- QDG-SRAM Simulation Using Physics-Based Models of QDG-FET and QDG-Inverter (R Mays, B Khan, R Gudlavalleti, F Papadimitrakopoulos, E Heller and F Jain)
- Quantum Dot Channel FETs Harnessing Mini-Energy Band Transitions in GeOx-Ge and Si QDSL for Multi-Bit Computing (F Jain, R Gudlavalleti, R Mays, B Saman, P-Y Chan, J Chandy, M Lingalugari and E Heller)
- Conditions for the Boundness of the Solution for Second Order Linear Delay Differential Equations (A Fish)
- Integrated Circuit Authentication Based on Resistor and Capacitor Variations of a Low Pass Filter (LoPUF) (S E Quadir and J A Chandy)
- Mid to Long Wave Infrared Photodetectors Using Intra-Mini-Energy Band Transitions in GeOx Cladded Ge Quantum Dot Superlattice (QDSL) FETs (F Jain, R Mays, R Gudlavalleti, J Chandy and E Heller)
- Implementing a Data Communication Security Tokens Management System Using COSMOS, an Energy Efficient Proof-of-Stake Blockchain Framework (M Chang, S Das, D Montrone and T Chakraborty)
- Novel Additive Manufacturing-Enabled RF Devices for 5G/mmWave, IoT, Smart Skins, and Wireless Sensing Applications (G Soto-Valle, K Hu, M Holda, Y Cui and M Tentzeris)
- A Multi-Bit Non-Volatile Compute-in-Memory Architecture with Quantum-Dot Transistor Based Unit (Y Zhao, F Qian, F Jain and L Wang)
- Nanoelectronics Based on Ferroelectric and van der Waals Materials — In Memory of Prof T P Ma (Wenjuan Zhu)
- Integrating QD-NVRAMs and QDC-SWS FET-Based Logic for Multi-Bit Computing (F Jain, R Gudlavalleti, R Mays, B Saman, J Chandy and E Heller)
- Author Index
Readership: Researchers, professionals, academics, and graduate students in electrical&electronics engineering, circuits&systems, microelectronics and nanoelectronics.
