Optical Processes in Semiconductors

by Jacques I. Pankove

Overview

Based on a series of lectures at Berkeley, 1968–1969, this is the first book to deal comprehensively with all of the phenomena involving light in semiconductors. The author has combined, for the graduate student and researcher, a great variety of source material, journal research, and many years of experimental research, adding new insights published for the first time in this book.
Coverage includes energy states in semiconductors and their perturbation by external parameters, absorption, relationships between optical constants, spectroscopy, radiative transitions, nonradiative recombination, processes in pn junctions, semiconductor lasers, interactions involving coherent radiation, photoelectric emission, photovoltaic effects, polarization effects, photochemical effects, effect of traps on luminescence, and reflective modulation.
The author has presented the subject in a manner which couples readily to physical intuition. He introduces new techniques and concepts, including nonradiative recombination, effects of doping on optical properties, Franz-Keldysh effect in absorption and emission, reflectance modulation, and many others. Dr. Pankove emphasizes the underlying principle that can be applied to the analysis and design of a wide variety of functional devices and systems. Many valuable references, illustrative problems, and tables are also provided here.

Product Details

ISBN-13:	9780486138701
Publisher:	Dover Publications
Publication date:	11/21/2012
Series:	Dover Books on Physics
Sold by:	Barnes & Noble
Format:	eBook
Pages:	448
File size:	32 MB
Note:	This product may take a few minutes to download.

Table of Contents

1 ENERGY STATES IN SEMICONDUCTORS
1-A Band Structure
1-A-1 Banding of Atomic Levels
1-A-2 Distribution in Momentum Space
1-A-3 Density-of-States Distribution
1-A-4 Carrier Concentration
1-B Inpurity States
1-C Band Tailing
1-D Excitons
1-D-1 Free Excitons
1-D-2 Excitonic Complexes
1-D-3 Polaritons
1-E Donor-Acceptor Pairs
1-F States in Semiconducting Alloys
2 PERTURBATION OF SEMICONDUCTORS BY EXTERNAL PARAMETERS
2-A Pressure Effects
2-A-1 Hydrostatic Pressure
2-A-2 Uniaxial Strain
2-B Temperature Effects
2-C Electric-Field Effects
2-C-1 Stark Effects
2-C-2 Franz-Keldysh Effect
2-C-3 Ionization Effects
2-D Magnetic-Field Effects
2-D-1 Landau Splitting
2-D-2 Zeeman Effect
3 ABSORPTION
3-A Fundamental Absorption
3-A-1 Allowed Direct Transitions
3-A-2 Forbidden Direct Transitions
3-A-3 Indirect Transitions between Indirect Valleys
3-A-4 Indirect Transitions between Direct Valleys
3-A-5 Transitions between Band Tails
3-A-6 Fundamental Absorption in the Presence of a Strong Electric Field
3-B Higher-energy Transitions
3-C Exciton Absorption
3-C-1 Direct and Indirect Excitons
3-C-2 Exciton Absorption in the Presence of an Electric Field
3-D Absorption due to Isoelectronic Traps
3-E Transitions between a Band and an Impurity Level
3-F Acceptor-to-Donor Transitions
3-G Intraband Transitions
3-G-1 p-Type Semiconductors
3-G-2 n-Type Semiconductors
3-H Free-carrier Absorption
3-I Lattice Absorption
3-J Vibrational Absorption of Impurities
3-K Hot-Electron-Assisted Absorption
4 RELATIONSHIPS BETWEEN OPTICAL CONSTANTS
4-A Absorption Coefficient
4-B Index of Reflection
4-C The Kramers-Kronig Relations
4-D Reflection Coefficient
4-E Determination of Carrier Effective Mass
4-F Plasma Resonance
4-G Transmission
4-H Interference Effects
5 ABSORPTION SPECTROSCOPY
6 RADIATIVE TRANSITIONS
6-A The Van Roosbroeck-Shockley Relation
6-B Radiative Efficiency
6-C The Configuration Diagram
6-D Fundamental Transitions
6-D-1 Exciton Recombination
6-D-2 Conduction-Band-to-Valence-Band Transitions
6-E Transition between a Band and an Impurity Level
6-E-1 Shallow Transitions
6-E-2 Deep Transitions
6-E-3 Transitions to Deep Levels
6-F Donor-Acceptor Transitions
6-F-1 Spectral Structure
6-F-2 Transition Probability
6-F-3 Time Dependence of Donor-to-Acceptor Transitions
6-G Intraband Transition
7 NONRADIATIVE RECOMBINATION
7-A Auger Effect
7-B Surface Recombination
7-C Recombination through Defects or Inclusions
7-D Configuration Diagram
7-E Mulitple-Phonon Emission
8 PROCESSES IN p-n JUNCTIONS
8-A Nature of the p-n Junction
8-A-1 The Depletion Layer
8-A-2 Junction Capacitance
8-A-3 Electric Field in the p-n Junction
8-B Forward-bias Processes
8-B-1 Band-to-Band Tunneling
8-B-2 Photon-Assisted Tunneling
8-B-3 Injection
8-B-4 Tunneling to Deep Levels
8-B-5 Donor-to-Acceptor Photon-Assisted Tunneling
8-B-6 Band Filling
8-B-7 Injection Luminescence in Lightly Doped Junctions
8-B-8 Optical Refrigeration
8-C Heterojunctions
8-D Reverse-Bias Processes
8-D-1 Saturation Current and Photoconductivity
8-D-2 Zener Breakdown
8-D-3 Avalanche Breakdown
9 STIMULATED EMISSION
9-A Relationship between Spontaneous and Stimulated Emission
9-B Criteria for Lasing in a Semiconductor
10 SEMICONDUCTOR LASERS
10-A Cavity and Modes
10-B Waveguiding Properties of the Active Region
10-C Far-Field Pattern
10-D Temperature Dependence
10-D-1 Effect of the Cavity
10-D-2 "Temperature Dependence of Losses, of Efficiency and of Threshold Current Density"
10-D-3 Power Dissipation
10-E Optimum Design for Injection Laser
10-F Influence of a Magnetic Field
10-G Pressure Effects
11 EXCITATION OF LUMINESCENCE AND LASING IN SEMICONDUCTORS
11-A Electroluminescence
11-A-1 Forward Biased p-n Junction
11-A-2 Forward-Biased Surface Barrier
11-A-3 Tunneling through an Insulating Layer
11-A-4 Bulk Excitation by Impact Ionization
11-B Optical Excitation
11-C Electron-Beam Excitation
12 PROCESSES INVOLVING COHERENT RADIATION
12-A Photon-Photon Interactions in Semiconductors
12-A-1 Quenching of a Laser by Another Laser
12-A-2 Amplification
12-A-3 Harmonic Generation
12-A-4 Two-photon Absorption
12-A-5 Frequency Mixing
12-B Photon-Phonon Interactions in Semiconductors
12-B-1 Raman Scattering
12-B-2 Brillouin Scattering
12-C Optical Properties of Acoustoelectric Domains
12-C-1 The Acoustoelectric Effect
12-C-2 Light Transmission of Acoustoelectric Domain
12-C-3 Light Emission by Acoustoelectric Domain
12-C-4 Brillouin Scattering Studies of Acoustoelectric Domains
13 PHOTOELECTRIC EMISSION
13-A Threshold for Emission
13-B Photoelectric Yield
13-C Effect of Surface Conditions
13-D Energy Distribution of Emitted Electrons
14 PHOTOVOLATAIC EFFECTS
14-A Photovoltaic Effect at p-n Junctions
14-A-1 Electrical Characteristics
14-A-2 Spectral Characteristics
14-A-3 The Solar Cell
14-B Photovoltaic Effects at Schottky Barriers
14-B-1 The Schottky Barrier
14-B-2 Photo-Effects
14-B-3 Particle Detectors
14-C Bulk Photovoltaic Effects
14-C-1 Dember Effects
14-C-2 Photomagnetoelectric Effect
14-D Anomalous Photovoltaic Effect
14-D-1 Characteristics of Anomalous Photovoltaic Cells
14-D-2 Conditions for Obtaining the Anomalous Photovoltaic Effect
14-D-3 Models for the Anomalaous Photovoltaic Effect
14-D-4 Angular Dependence of Photovoltaic Effects
14-E Other Photovoltaic Effects
14-E-1 Lateral Photoeffect
14-E-2 Optically Induced Barriers
14-E-3 Photovoltaic Effect at a Graded Energy Gap
15 POLARIZATION EFFECTS
15-A Birefringence
15-A-1 Birefringence in Uniaxial Crystals
15-A-2 Elliptical Polarization
15-A-3 Birefringence in Biaxial Crystals
15-B Induced Optical Anisotropy
15-B-1 Electro-Optic Kerr Effect
15-B-2 Pockets Effect or Linear Electro-Optic Effect
15-B-3 Faraday Effect
 
17-E-4 Temperature Dependence of Trapping in GaAs Injection Lasers
17-E-5 Double-Acceptor Model
17-E-6 Internal Q-Switching
17-F Triboluminescence
17-F-1 Strain-Excited Luminescence
17-F-2 Strain-Stimulated Luminescence
17-F-3 Fracture Luminescence
18 REFLECTANCE MODULATION
18-A Dependence of Reflectance on the Band Structure
18-B Reflectance-modulation Techniques
18-B-1 Electroreflectance
18-B-2 Optical Modulation of Reflectance
18-B-3 Cathodoreflectance Modulation
18-B-4 Piezoreflectance Modulation
18-B-5 Thermoreflectance Modulation
18-B-6 Wavelength Modulation
18-C Some Results
APPENDICES
I Table of Contents
II Properties of Semiconductors
III Nomograph of the Temperature Dependence of the Fermi Level in a Degenerate Parabolic Band
IV Physical Constants
INDEX