Photo-induced Defects in Semiconductors

by David Redfield, Richard H. Bube

Overview

This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional crystalline materials before giving a detailed description of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. The book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

Product Details

ISBN-13:	9780521461962
Publisher:	Cambridge University Press
Publication date:	01/26/1996
Series:	Cambridge Studies in Semiconductor Physics and Microelectronic Engineering , #4
Pages:	230
Product dimensions:	5.98(w) x 9.02(h) x 0.67(d)

Table of Contents

1. Introduction: metastable defects; 2. III–V compounds: DX2 and EL2 centers; 3. Other crystalline materials; 4. Hydrogenated amorphous silicon: properties of defects; 5. Hydrogenated amorphous silicon: photo-induced defect kinetics and processes; 6. Other amorphous semiconductors; 7. Photo-induced defect effects in devices; References; Index.

Editorial Reviews

A complete overview of the properties of deep-level, localized defects in semiconductors that can be created or destroyed by light examines the long lived (metastable) defects in terms of configurational coordinate diagrams, energy bands, and energy levels. DX and ELS centers in III-V compounds and crystalline materials are discussed, along with descriptions of hydrogenated amorphous silicon, and photoinduced defects in devices, xerography, solar cells, and thin film transistors. Annotation c. Book News, Inc., Portland, OR (booknews.com)

Booknews

"This book by Redfield and Bube gives a comprehensive review of the subject. In my opinion, the authors review the most important PI defects in crystalline and amorphous semiconductors, focusing on existing models without mathematical complications and emphasizing the need for more sophisticated many-electron models....invaluable as an introduction for those who are new to the field and for graduate students." J. Abdulhalim, Optics & Photonics News

From the Publisher