Polarization Effects in Two-Terminal Group III Nitride Semiconductor Devices

Polarization Effects in Two-Terminal Group III Nitride Semiconductor Devices

by C. Jayant Praharaj
Polarization Effects in Two-Terminal Group III Nitride Semiconductor Devices

Polarization Effects in Two-Terminal Group III Nitride Semiconductor Devices

by C. Jayant Praharaj

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Overview

The book discusses the device applications of barriers built from wide band gap semiconductors and the effect of unique physical properties like spontaneous and piezoelectric polarization on barriers and their device properties.

Product Details

BN ID: 2940013087835
Publisher: Choudhury Jayant Praharaj
Publication date: 08/30/2011
Sold by: Barnes & Noble
Format: eBook
File size: 3 MB

About the Author

C. Jayant Praharaj works in the field of semiconductor electronics. He is originally from India. He came to the United States as a graduate student and he has been living in the United States for the last 13 years. He currently lives in California. He has worked in the areas of wide band-gap semiconductors, non-volatile memory and nano-electromechanical systems. " Wide Band Gap Semiconductor Barriers " discusses the device applications of barriers built from wide band gap semiconductors and the effect of unique physical properties like spontaneous and piezoelectric polarization on barriers and their device properties.
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