Semiconductor Device Physics and Simulation / Edition 1

by J.S. Yuan, Juin Jei Liou

Overview

The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em­ ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light­ emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.

Product Details

ISBN-13:	9780306457241
Publisher:	Springer US
Publication date:	05/31/1998
Series:	Microdevices
Edition description:	1998
Pages:	336
Product dimensions:	7.01(w) x 10.00(h) x 0.03(d)

Table of Contents

1. Introduction.- 2. P—N Junction.- 3. Bipolar Junction Transistors.- 4. Junction Field-Effect Transistors.- 5. Metal—Oxide Semiconductor Field-Effect Transistors.- 6. BiCMOS Devices.- 7. Metal—Semiconductor Field-Effect Transistors.- 8. Heterojunction Bipolar Transistors.- 9. Phoonductive Diodes.

Editorial Reviews

Current technology can place 10 million transistors on a single micro-chip. To anticipated how these densely packed transistors will behave, engineers have used traditional closed-form analytical models. But as the number of transistors on a chip increases, the less reliable the traditional methods become. Consequently, chip engineers have begun using numerical simulations to model chip behavior, and the authors (electrical engineering, U. of Central Florida) provide a thorough examination of how these methods can be used for modeling various modern semiconductor devices. Excluded from the discussions, however, are simulations of less mainstream devices such as photonic and laser diodes. Assumes the reader understands device structures and operations. Annotation c. by Book News, Inc., Portland, Or.

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