5
1
9780890065327
Sensor Technology and Devices / Edition 1 available in Hardcover
- ISBN-10:
- 0890065322
- ISBN-13:
- 9780890065327
- Pub. Date:
- 03/01/1994
- Publisher:
- Artech House, Incorporated
- ISBN-10:
- 0890065322
- ISBN-13:
- 9780890065327
- Pub. Date:
- 03/01/1994
- Publisher:
- Artech House, Incorporated
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Overview
"A results-oriented book. Quality line drawings, lucid photography, and informative graphs are used generously... The theoretical rigor of each chapter amply supports the real-world design examples that follow". -- Sensors Magazine
"One of the few sources to offer such comprehensive coverage". -- IEEE Electrical Insulation
Product Details
ISBN-13: | 9780890065327 |
---|---|
Publisher: | Artech House, Incorporated |
Publication date: | 03/01/1994 |
Pages: | 540 |
Product dimensions: | 6.00(w) x 9.00(h) x 1.38(d) |
Table of Contents
Preface | xiii | |
Chapter 1 | Sensing the Real World | |
1.1 | Introduction | 1 |
1.2 | Sensor Classification | 2 |
1.3 | Sensor Parameters | 3 |
1.4 | A Seamless Sensor System | 4 |
1.5 | Sensor Industry Growth | 6 |
1.6 | Summary | 8 |
References | 11 | |
Chapter 2 | Modeling and Simulation of Microsensors and Actuators | |
2.1 | Introduction | 13 |
2.2 | Modeling Equations | 14 |
2.2.1 | The Basic Semiconductor Equations | 14 |
2.2.2 | Boundary Conditions | 16 |
2.2.3 | Simplification of the Problem | 17 |
2.2.4 | Combination of Mechanical and Electrical Effects | 18 |
2.3 | Discretization Procedures | 20 |
2.3.1 | Accelerated Nonlinear Procedures | 21 |
2.3.2 | Methods of Solution and Grid Generation | 22 |
2.3.3 | Equation Discretization | 26 |
2.3.4 | Error Checking | 29 |
2.4 | Results and Discussion | 30 |
2.4.1 | Hall Devices | 30 |
2.4.2 | Magnetotransistor | 33 |
2.4.3 | Micromachined Flow Sensor | 36 |
2.4.4 | Dynamic Microstructures | 39 |
2.5 | Summary | 43 |
References | 43 | |
Chapter 3 | Bulk Micromachining Technology | |
3.1 | Introduction | 49 |
3.2 | Basic Concept of Bulk Micromachining | 50 |
3.2.1 | Silicon as a Mechanical Material | 50 |
3.2.2 | Wet Anisotropic Etching | 51 |
3.2.3 | Anisotropic Etchants | 59 |
3.2.4 | Etch-Stop Mechanisms | 69 |
3.3 | CMOS Technology and Bulk Micromachining | 76 |
3.3.1 | CMOS Processing | 76 |
3.3.2 | Micromechanical Structures in CMOS Processing | 77 |
3.4 | Applications of Bulk Micromachining | 82 |
3.4.1 | Bulk Micromachined Accelerometer | 82 |
3.4.2 | Thermal Infrared Sensor | 84 |
3.4.3 | Inductors in CMOS Technology | 86 |
3.5 | Summary | 89 |
References | 90 | |
Chapter 4 | Surface Micromachining Technology | |
4.1 | Introduction | 95 |
4.2 | Basic Concept of Surface Micromachining Technology | 96 |
4.2.1 | Layer Stacking | 96 |
4.2.2 | Sealing | 98 |
4.3 | Polysilicon for Surface Micromachining | 99 |
4.3.1 | Deposition of Polysilicon | 100 |
4.3.2 | As-Deposited Film Stress | 105 |
4.3.3 | Annealing of Undoped Films | 107 |
4.3.4 | In-Situ Doping | 108 |
4.3.5 | Ex-Situ Doping | 115 |
4.3.6 | Sacrificial Layers and Sacrificial Etching | 118 |
4.3.7 | Stiction | 124 |
4.4 | Mechanical Characterization of Polysilicon | 126 |
4.4.1 | Test Structures for In-Situ Characterization | 126 |
4.4.2 | Gradient of Residual Stress | 130 |
4.4.3 | Load-Response Characterization | 133 |
4.5 | Application of Surface Micromachining | 140 |
4.5.1 | Surface Micromachined Accelerometer | 140 |
4.5.2 | Electrostatically Driven Resonators | 143 |
4.5.3 | Integration of Surface Micromachined Structures--Processing Issues | 144 |
4.6 | LIGA Process | 146 |
4.7 | Summary | 149 |
References | 150 | |
Chapter 5 | Silicon Direct Wafer Bonding | |
5.1 | Introduction | 157 |
5.2 | Mechanism of Direct Wafer Bonding | 159 |
5.2.1 | SiO[subscript 2]//SiO[subscript 2] Bonding | 160 |
5.2.2 | Si//Si Bonding | 164 |
5.3 | Processing Considerations | 168 |
5.3.1 | Interface Integrity | 168 |
5.3.2 | Bond Strength | 178 |
5.3.3 | Shaping Bonded Wafers | 180 |
5.3.4 | Microdefects in Bonded Wafers | 186 |
5.4 | Application of Direct Wafer Bonding to Sensors and Actuators | 192 |
5.4.1 | Threshold Pressure Switch | 192 |
5.4.2 | Pressure Sensor | 195 |
5.4.3 | Peristaltic Membrane Pump | 198 |
5.5 | Summary | 199 |
References | 199 | |
Chapter 6 | Packaging for Sensors | |
6.1 | Introduction | 203 |
6.2 | Basic Considerations for Sensor Packaging | 204 |
6.3 | Wafer-Level Packaging | 207 |
6.3.1 | Glass-Sealed Technique | 208 |
6.3.2 | Anodic Bonding | 210 |
6.4 | Assembly Techniques | 212 |
6.4.1 | Die Bonding | 212 |
6.4.2 | Wire Bonding | 217 |
6.4.3 | Chip Coatings | 219 |
6.4.4 | Package Types | 220 |
6.5 | Packaging for Specific Applications | 227 |
6.5.1 | Pressure Sensor Packaging | 227 |
6.5.2 | Accelerometer Packaging | 235 |
6.6 | Summary | 237 |
References | 237 | |
Chapter 7 | Magnetic Field Sensors Based on Lateral Magnetotransistors | |
7.1 | Introduction | 239 |
7.2 | Lateral Magnetotransistors | 240 |
7.2.1 | Combined Action of an Electric Field and a Magnetic Field | 241 |
7.2.2 | Lateral Magnetotransistor in CMOS Technology | 242 |
7.2.3 | Suppressed Sidewall Injection Magnetotransistor in CMOS Technology | 243 |
7.2.4 | Suppressed Sidewall Injection Magnetotransistor in Bipolar Technology | 255 |
7.2.5 | Offset in Magnetotransistors | 258 |
7.2.6 | Noise in Magnetotransistors | 260 |
7.2.7 | Surface Effects | 268 |
7.3 | Multidimensional Sensing | 270 |
7.3.1 | Lateral Magnetotransistor Sensitive to Magnetic Field Either Parallel or Perpendicular to the Chip Surface | 271 |
7.3.2 | Two-Dimensional Sensing | 273 |
7.3.3 | Three-Dimensional Sensing | 277 |
7.4 | Summary | 282 |
References | 282 | |
Chapter 8 | Thermal Sensors | |
8.1 | Introduction | 287 |
8.2 | Bipolar Devices as Temperature Sensors | 288 |
8.2.1 | Diodes as Temperature Sensors | 289 |
8.2.2 | Bipolar Transistors as Temperature Sensors | 290 |
8.2.3 | Stability | 294 |
8.3 | Integrated Temperature Sensors in Bipolar Technology | 294 |
8.4 | Intrinsically Referenced Temperature Sensors | 300 |
8.5 | Temperature Sensors in CMOS Technology | 302 |
8.5.1 | Bipolar Transistors in CMOS Technology | 302 |
8.5.2 | Integrated Temperature Sensors in CMOS Technology Based on Bipolar Transistors | 304 |
8.5.3 | Temperature Sensors Based on MOS Transistors and Resistors | 307 |
8.5.4 | Temperature Sensors with Digital Output | 309 |
8.6 | Polysilicon Resistors | 311 |
8.7 | Summary | 313 |
References | 313 | |
Chapter 9 | Planar Silicon Photosensors | |
9.1 | Introduction | 317 |
9.2 | Planar Silicon Photodiodes | 320 |
9.3 | Fundamentals of Photosensors | 322 |
9.3.1 | Material Properties | 322 |
9.3.2 | Quantum Efficiency | 326 |
9.3.3 | Collection Efficiency Models | 327 |
9.3.4 | Photocurrent | 330 |
9.3.5 | Noise Current | 331 |
9.3.6 | Response Time | 333 |
9.4 | Level of Integration | 334 |
9.5 | Summary | 337 |
References | 338 | |
Chapter 10 | Charge Coupled Devices | |
10.1 | Introduction | 341 |
10.2 | Basic Concepts | 342 |
10.2.1 | CCD Charge Storage Fundamentals | 342 |
10.2.2 | CCD Architectures | 343 |
10.2.3 | Three-Phase CCD Example | 344 |
10.3 | Quantum Efficiency | 347 |
10.3.1 | QE Model | 348 |
10.3.2 | Quantum Yield and Photon Transfer Curve | 348 |
10.3.3 | Backside Illumination and Thinning | 350 |
10.3.4 | Details of Flashgate Theory | 352 |
10.3.5 | Thinning Technology and Backside Performance | 357 |
10.3.6 | Alternative Approaches for High QE | 358 |
10.4 | Charge Collection Efficiency | 360 |
10.5 | Charge Transfer Efficiency | 366 |
10.6 | Read Noise | 369 |
10.7 | Summary | 373 |
Acknowledgments | 374 | |
References | 374 | |
Chapter 11 | Sensors for the Automotive Industry | 377 |
11.1 | Introduction | 384 |
11.2 | Sensing Technology in Vehicle Systems | 384 |
11.2.1 | Manifold Absolute Pressure | 386 |
11.2.2 | Tire Pressure Sensor | 390 |
11.2.3 | Position, Rotation, and Speed Sensing | 391 |
11.2.4 | Flow | 399 |
11.2.5 | Accelerometers | 401 |
11.3 | Future Automotive Sensing | 407 |
11.3.1 | High-Temperature Operation | 407 |
11.3.2 | Liquid Level | 407 |
11.3.3 | Chemical Sensing | 408 |
11.3.4 | Oil Quality | 410 |
11.3.5 | Capability to Compute Rather than Sense | 410 |
11.3.6 | Vehicle Diagnostics | 412 |
11.3.7 | RF Sensor Applications | 413 |
11.3.8 | Future Sensor Requirements | 414 |
11.4 | Summary | 417 |
References | 418 | |
Chapter 12 | Signal Processing for Micromachined Sensors | |
12.1 | Introduction | 421 |
12.2 | Sensing Methods | 421 |
12.2.1 | Piezoelectric Sensing | 422 |
12.2.2 | Piezoresistive Sensing | 424 |
12.2.3 | Capacitive Sensing | 428 |
12.3 | Open- and Closed-Loop Systems | 433 |
12.3.1 | Different Micromachined Structures--Mechanical Issues | 433 |
12.3.2 | Open-Loop Capacitive Sensing | 438 |
12.3.3 | Closed-Loop Capacitive Sensing | 440 |
12.4 | Integration | 446 |
12.4.1 | Integrated Pressure Sensor | 446 |
12.4.2 | Integrated Accelerometer | 446 |
12.4.3 | Dynamic Considerations | 448 |
12.4.4 | Shock Considerations | 450 |
12.4.5 | Self-Test Features | 452 |
12.4.6 | Testing and Trimming | 453 |
12.5 | Summary | 455 |
References | 455 | |
Chapter 13 | Controlled Oscillators and Their Applicability to Sensors | |
13.1 | Introduction | 457 |
13.2 | Controlled Sinusoidal Oscillators | 458 |
13.2.1 | The Oscillator Circuit and Its Control Characteristics | 458 |
13.2.2 | Oscillator Amplitude and Frequency Transients | 461 |
13.2.3 | Interaction of the Frequency and Amplitude Controls | 463 |
13.2.4 | Sinusoidal Oscillators in Applications | 466 |
13.3 | Controlled Multivibrators | 467 |
13.3.1 | Multivibrators versus Sinusoidal Oscillators | 467 |
13.3.2 | Multivibrators with Operational Amplifiers | 468 |
13.3.3 | Switches in the Basic Multivibrator Circuits | 471 |
13.3.4 | One-Amplifier Multivibrator | 476 |
13.3.5 | Voltage-to-Frequency Converters | 479 |
13.3.6 | Current-to-Frequency Converters | 484 |
13.3.7 | Duty-Cycle Modulation | 504 |
13.3.8 | Controlled Multivibrators in Applications | 507 |
13.4 | Summary | 507 |
References | 508 | |
About the Authors | 511 | |
Index | 517 |
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