Theoretical Modeling of Epitaxial Graphene Growth on the Ir(111) Surface

Theoretical Modeling of Epitaxial Graphene Growth on the Ir(111) Surface

by Holly Alexandra Tetlow
ISBN-10:
3319659715
ISBN-13:
9783319659718
Pub. Date:
10/04/2017
Publisher:
Springer International Publishing
ISBN-10:
3319659715
ISBN-13:
9783319659718
Pub. Date:
10/04/2017
Publisher:
Springer International Publishing
Theoretical Modeling of Epitaxial Graphene Growth on the Ir(111) Surface

Theoretical Modeling of Epitaxial Graphene Growth on the Ir(111) Surface

by Holly Alexandra Tetlow
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Overview

One possible method of producing high-quality graphene is to grow it epitaxially; this thesis investigates the mechanisms involved in doing so. It describes how the initial stages of growth on the Ir(111) surface are modelled using both rate equations and kinetic Monte Carlo, based upon nudged elastic band (NEB) calculated reaction energy barriers. The results show that the decomposition mechanism involves production of C monomers by breaking the C-C bond.

In turn, the thesis explores the nucleation of carbon clusters on the surface from C monomers prior to graphene formation. Small arch-shaped clusters containing four to six C atoms, which may be key in graphene formation, are predicted to be long-lived on the surface.

In closing, the healing of single vacancy defects in the graphene/Ir(111) surface is investigated, and attempts to heal said defects using ethylene molecules is simulated with molecular dynamics and NEB calculated energy barriers.


Product Details

ISBN-13: 9783319659718
Publisher: Springer International Publishing
Publication date: 10/04/2017
Series: Springer Theses
Edition description: 1st ed. 2017
Pages: 182
Product dimensions: 6.10(w) x 9.25(h) x (d)

Table of Contents

Introduction.- Theoretical Methods.- Producing a Source of Carbon: Hydrocarbon Decomposition.- Hydrocarbon Decomposition: Kinetic Monte Carlo Algorithm.- Thermal Decomposition in Graphene Growth: Kinetic Monte Carlo Results.- Beginnings of Growth: Carbon Cluster Nucleation.- Removing Defects: Healing Single Vacancy Defects.- Final Remarks.

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