Trap Level Spectroscopy in Amorphous Semiconductors

Trap Level Spectroscopy in Amorphous Semiconductors

ISBN-10:
0323165036
ISBN-13:
9780323165037
Pub. Date:
06/28/2010
Publisher:
Elsevier Science
ISBN-10:
0323165036
ISBN-13:
9780323165037
Pub. Date:
06/28/2010
Publisher:
Elsevier Science
Trap Level Spectroscopy in Amorphous Semiconductors

Trap Level Spectroscopy in Amorphous Semiconductors

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Overview

Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages.


  • Provides information on the most used spectroscopic techniques
  • Discusses the advantages and disadvantages of each technique

Product Details

ISBN-13: 9780323165037
Publisher: Elsevier Science
Publication date: 06/28/2010
Pages: 128
Product dimensions: 6.00(w) x 9.00(h) x 0.28(d)

About the Author

Dr. Victor V. Mikla is affiliated with the Physical & Mathematical Disciplines, Department of Humanities & Natural Sciences, Uzhhgorod National University, Uzhhgorod,Ukraine

Victor I. Mikla, PhD, is Chair of Physical & Mathematical Disciplines in the Department of Humanities & Natural Sciences at Uzhhgorod National University, Uzhhorod, Ukraine. Dr. Mikla specializes in photo-electronic materials and devices, and has published research articles widely on a broad range of inter-disciplinary topics including metastable states in amorphous chalcogenides, trap level spectroscopy, medical and non-medical imaging applications of amorphous semiconductors, xerographic spectroscopy, photo-induced & structural changes, and raman scattering.

Table of Contents

  1. Introduction
  2. Thermally stimulated depolarization currents in amorphous chalcogenides
  3. Carrier transport processes in amorphous solids
  4. Time-of-flight experiments in amorphous chalcogenide semiconductors
  5. Xerographic spectroscopy of states in mobility gap
  6. Photoinduced effects on states in the mobility gap
  7. Spectroscopic studies of gap states and laser-induced structural transformations in se-based as-free amorphous semiconductors

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